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Single FETs, MOSFETs
Manufacturer
Series
Packaging
Product Status
Package / Case
Mounting Type
Operating Temperature
Technology
FET Type
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
FET Feature
Power Dissipation (Max)
Vgs(th) (Max) @ Id
Supplier Device Package
Grade
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Qualification
Stocking Options
Environmental Options
Media
Marketplace Product
888 Results
Mfr Part # Quantity Price Series Package Product Status Package / Case Mounting Type Operating Temperature Technology FET Type Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs FET Feature Power Dissipation (Max) Vgs(th) (Max) @ Id Supplier Device Package Grade Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Drain to Source Voltage (Vdss) Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Qualification
TO220FMD10N65F
TO220FMD10N65F
MOSFET TO-220F N 650V 10A
NextGen Components
19,255
Marketplace
1,000 : $1,660.00
Tube
TO-220F
Tube
Active
 - - - MOSFET (Metal Oxide) N-Channel 10A (Tc) 1Ohm @ 5A, 10V - - - - - 10V ±30V 650 V 34.2 nC @ 10 V - -
NC1M120C75GTNG
NC1M120C75GTNG
SiC MOSFET N 1200V 75mohm 47A 3
NextGen Components
2,400
Marketplace
100 : $2,685.00
Tube
NC1M
Tube
Active
 TO-247-3 Through Hole -55°C ~ 175°C (TJ) SiCFET (Silicon Carbide) N-Channel 47A (Tc) 75mOhm @ 20A, 20V - 288W (Ta) 2.8V @ 5mA TO-247-3L - 20V +20V, -5V 1200 V - 1450 pF @ 1000 V -
NC1M120C40HTNG
NC1M120C40HTNG
SiC MOSFET N 1200V 40mohm 75A 4
NextGen Components
2,400
Marketplace
100 : $3,685.00
Tube
NC1M
Tube
Active
 TO-247-4 Through Hole -55°C ~ 175°C (TJ) SiCFET (Silicon Carbide) N-Channel 75A (Tc) 40mOhm @ 35A, 20V - 366W (Ta) 2.8V @ 10mA TO-247-4L - 20V +20V, -5V 1200 V - 2534 pF @ 1000 V -
TO220FMDD7N65F
TO220FMDD7N65F
MOSFET TO-220F N 650V 7A
NextGen Components
30,905
Marketplace
1,000 : $1,660.00
Tube
TO-220F
Tube
Active
 - - - MOSFET (Metal Oxide) N-Channel 7A (Tc) 1.4Ohm @ 3.5A, 10V - - - - - 10V ±30V 650 V 20.7 nC @ 10 V - -
NC1M120C75HTNG
NC1M120C75HTNG
SiC MOSFET N 1200V 75mohm 47A 4
NextGen Components
2,400
Marketplace
100 : $2,685.00
Tube
NC1M
Tube
Active
 TO-247-4 Through Hole -55°C ~ 175°C (TJ) SiCFET (Silicon Carbide) N-Channel 47A (Tc) 75mOhm @ 20A, 20V - 288W (Ta) 2.8V @ 5mA TO-247-4L - 20V +20V, -5V 1200 V - 1450 pF @ 1000 V -
NC1M120C40GTNG
NC1M120C40GTNG
SiC MOSFET N 1200V 40mohm 76A 3
NextGen Components
2,400
Marketplace
100 : $3,685.00
Tube
NC1M
Tube
Active
 TO-247-3 Through Hole -55°C ~ 175°C (TJ) SiCFET (Silicon Carbide) N-Channel 76A (Tc) 40mOhm @ 35A, 20V - 375W (Ta) 2.8V @ 10mA TO-247-3L - 20V +20V, -5V 1200 V - 2534 pF @ 1000 V -
TO220FMDD4N65F
TO220FMDD4N65F
MOSFET TO-220F N 650V 4A
NextGen Components
22,550
Marketplace
1,000 : $1,360.00
Tube
TO-220F
Tube
Active
 - - - MOSFET (Metal Oxide) N-Channel 4A (Tc) 2.8Ohm @ 2A, 10V - - - - - 10V ±30V 650 V 12 nC @ 10 V - -
TO220FMD12N65F
TO220FMD12N65F
MOSFET TO-220F N 650V 12A
NextGen Components
6,750
Marketplace
1,000 : $1,760.00
Tube
TO-220F
Tube
Active
 - - - MOSFET (Metal Oxide) N-Channel 12A (Tc) 0.8Ohm @ 6A, 10V - - - - - 10V ±30V 650 V 41.9 nC @ 10 V - -
NC1M120C12HTNG
NC1M120C12HTNG
SiC MOSFET N 1200V 12mohm 214A
NextGen Components
2,400
Marketplace
100 : $8,685.00
Tube
NC1M
Tube
Active
 TO-247-4 Through Hole -55°C ~ 175°C (TJ) SiCFET (Silicon Carbide) N-Channel 214A (Tc) 20mOhm @ 100A, 20V - 938W (Ta) 3.5V @ 40mA TO-247-4L - 20V +20V, -5V 1200 V - 8330 pF @ 1000 V -
NC1M120C75RRNG
NC1M120C75RRNG
SiC MOSFET N 1200V 75mohm 46A 7
NextGen Components
2,400
Marketplace
100 : $2,585.00
Tape & Reel (TR)
NC1M
Tape & Reel (TR)
Active
 TO-263-8, DPak (7 Leads + Tab) Surface Mount -55°C ~ 150°C (TJ) SiCFET (Silicon Carbide) N-Channel 46A (Tc) 75mOhm @ 20A, 18V - 240W (Ta) 2.3V @ 5mA TO-263-7L - 18V +18V, -5V 1200 V - 1402 pF @ 1000 V -