NC1M120C12HTNG - NextGen Components

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NC1M120C12HTNG

NC1M120C12HTNG

Part Number	NC1M120C12HTNG
Manufacturer	NextGen Components
Other Part Numbers	3372-NC1M120C12HTNG-ND 3372-NC1M120C12HTNG
Description	SiC MOSFET N 1200V 12mohm 214A
Detailed Description	N-Channel 1200 V 214A (Tc) 938W (Ta) Through Hole TO-247-4L

Product Attributes

Category		Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Manufacturer		NextGen Components
Series		NC1M
Packaging		Tube
Part Status		Active
Package / Case		TO-247-4
Mounting Type		Through Hole
Operating Temperature		-55°C ~ 175°C (TJ)
Technology		SiCFET (Silicon Carbide)
FET Type		N-Channel
Current - Continuous Drain (Id) @ 25°C		214A (Tc)
Rds On (Max) @ Id, Vgs		20mOhm @ 100A, 20V
Power Dissipation (Max)		938W (Ta)
Vgs(th) (Max) @ Id		3.5V @ 40mA
Supplier Device Package		TO-247-4L
Drive Voltage (Max Rds On, Min Rds On)		20V
Vgs (Max)		+20V, -5V
Drain to Source Voltage (Vdss)		1200 V
Input Capacitance (Ciss) (Max) @ Vds		8330 pF @ 1000 V

Documents & Media

RESOURCE TYPE		LINK
Datasheets		NC1M120C12HTNG

Environmental & Export Classifications

ATTRIBUTE		DESCRIPTION
ECCN		EAR99
HTSUS		8541.29.0095
Moisture Sensitivity Level (MSL)		1 (Unlimited)
REACH Status		REACH Unaffected
RoHS Status		RoHS Compliant

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