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NC1M120C75GTNG

NC1M120C75GTNG

Part Number
NC1M120C75GTNG
Manufacturer NextGen Components
Other Part Numbers
3372-NC1M120C75GTNG-ND
3372-NC1M120C75GTNG
Description SiC MOSFET N 1200V 75mohm 47A 3
Detailed Description N-Channel 1200 V 47A (Tc) 288W (Ta) Through Hole TO-247-3L
Datasheet Datasheet

Product Attributes

Category
Manufacturer NextGen Components
Series
NC1M
Packaging
Tube
Part Status Active
Package / Case TO-247-3
Mounting Type Through Hole
Operating Temperature -55°C ~ 175°C (TJ)
Technology SiCFET (Silicon Carbide)
FET Type N-Channel
Current - Continuous Drain (Id) @ 25°C 47A (Tc)
Rds On (Max) @ Id, Vgs 75mOhm @ 20A, 20V
Power Dissipation (Max) 288W (Ta)
Vgs(th) (Max) @ Id 2.8V @ 5mA
Supplier Device Package TO-247-3L
Drive Voltage (Max Rds On, Min Rds On) 20V
Vgs (Max) +20V, -5V
Drain to Source Voltage (Vdss) 1200 V
Input Capacitance (Ciss) (Max) @ Vds 1450 pF @ 1000 V

Documents & Media

RESOURCE TYPE LINK
Datasheets NC1M120C75GTNG

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
ECCN EAR99
HTSUS 8541.29.0095
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
RoHS Status RoHS Compliant

Available To Order

Tube

QUANTITY UNIT PRICE EXT PRICE
100 $26.85 $2,685.00