IV1Q12050T3

Part Number	IV1Q12050T3
Manufacturer	Inventchip Technology
Other Part Numbers	4084-IV1Q12050T3-ND 4084-IV1Q12050T3
Description	SIC MOSFET, 1200V 50MOHM, TO-247
Detailed Description	N-Channel 1200 V 58A (Tc) 327W (Tc) Through Hole TO-247-3
Manufacturer Standard Lead Time	12 weeks
Datasheet	Datasheet

Category		Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Manufacturer		Inventchip Technology
Series
Packaging		Tube
Part Status		Active
Package / Case		TO-247-3
Mounting Type		Through Hole
Operating Temperature		-55°C ~ 175°C (TJ)
Technology		SiCFET (Silicon Carbide)
FET Type		N-Channel
Current - Continuous Drain (Id) @ 25°C		58A (Tc)
Rds On (Max) @ Id, Vgs		65mOhm @ 20A, 20V
Power Dissipation (Max)		327W (Tc)
Vgs(th) (Max) @ Id		3.2V @ 6mA
Supplier Device Package		TO-247-3
Drive Voltage (Max Rds On, Min Rds On)		20V
Vgs (Max)		+20V, -5V
Drain to Source Voltage (Vdss)		1200 V
Gate Charge (Qg) (Max) @ Vgs		120 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds		2770 pF @ 800 V

RESOURCE TYPE		LINK
Datasheets		IV1Q12050T3

ATTRIBUTE		DESCRIPTION
ECCN		EAR99
HTSUS		8541.29.0095
Moisture Sensitivity Level (MSL)		1 (Unlimited)
RoHS Status		ROHS3 Compliant

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