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Single FETs, MOSFETs
Manufacturer
Series
Packaging
Product Status
Package / Case
Mounting Type
Operating Temperature
Technology
FET Type
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
FET Feature
Power Dissipation (Max)
Vgs(th) (Max) @ Id
Supplier Device Package
Grade
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Qualification
Stocking Options
Environmental Options
Media
Marketplace Product
2 Results
Mfr Part # Quantity Price Series Package Product Status Package / Case Mounting Type Operating Temperature Technology FET Type Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs FET Feature Power Dissipation (Max) Vgs(th) (Max) @ Id Supplier Device Package Grade Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Drain to Source Voltage (Vdss) Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Qualification
30
Marketplace
5 : $45.00
10 : $80.00
100 : $700.00
Bulk
Bulk
Active
TO-247-4 Through Hole -40°C ~ 175°C (TJ) SiCFET (Silicon Carbide) N-Channel 12A (Ta) 135mOhm @ 10A, 15V - 100W (Tc) 3.2V @ 5mA TO-247 - 15V +15V, -5V 1200 V 40 nC @ 15 V 1810 pF @ 200 V -
CC-CN-23-0123
SiC MOSFET 20A 1200V TO-247-3
15
Marketplace
5 : $45.00
10 : $80.00
100 : $700.00
Bulk
Bulk
Active
TO-247-3 Through Hole -40°C ~ 175°C (TJ) SiCFET (Silicon Carbide) - 20A (Ta) 85mOhm @ 10A, 15V - - 2.4V @ 5mA TO-247-3 - - - - 16 nC @ 5 V 810 pF @ 200 V -
1