SUD19N20-90-T4-E3 | Vishay | - | TO-252-3, DPak (2 Leads + Tab), SC-63 | Trans MOSFET N-CH 200V 19A 3-Pin(2+Tab) DPAK T/R |
DataSheet
|
1.965 | ||
SI4413ADY-T1-GE3 | Vishay | - | 8-SO | Source Voltage Vds:-30V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V |
DataSheet
|
1.541 | ||
SI4430BDY-T1-GE3 | Vishay | - | 8-SOIC (0.154", 3.90mm Width) | Source Voltage Vds:30V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:3V |
DataSheet
|
1.1336 | ||
SI4463BDY-T1-GE3 | Vishay | - | 8-SOIC (0.154", 3.90mm Width) | Trans MOSFET P-CH 20V 9.8A 8-Pin SOIC N T/R |
DataSheet
|
1.0719 | ||
SI4922BDY-T1-GE3 | Vishay | - | 8-SO | DUAL N CHANNEL MOSFET, 30V, 8A; Transist; DUAL N CHANNEL MOSFET, 30V, 8A; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:8A |
DataSheet
|
1.0945 | ||
SI7806ADN-T1-GE3 | Vishay | - | PowerPAK® 1212-8 | Single N-Channel 30 V 0.016 Ohm 20 nC 1.5W Silicon SMT Mosfet - POWERPAK-1212-8 |
DataSheet
|
0.7599 | ||
SI7840BDP-T1-GE3 | Vishay | - | PowerPAK® SO-8 | MOSFET N-CH 30V 11A PPAK SO-8 |
DataSheet
|
1.387 | ||
RD70HVF1-101 | Renesas | - | Available stock | RD70HVF1 is a MOSFET type transistor specifically designed for VHF/UHF High power amplifiers applications. |
DataSheet
|
market price | ||
A2T18S160W31GSR3 | NXP Semiconductors | - | NI-780GS-2L2LA | RF Power Transistor,1805 to 1995 MHz, 129 W, Typ Gain in dB is 19.9 @ 1880 MHz, 28 V, LDMOS, SOT1805 |
DataSheet
|
154.855 | ||
A2T18S162W31GSR3 | NXP Semiconductors | - | NI-780GS-2L2LA | Airfast RF Power LDMOS Transistor 1805-1880 MHz, 32 W Avg., 28 V |
DataSheet
|
147.625 | ||
AFT18S260W31GSR3 | NXP Semiconductors | - | NI-780GS-2L2LA | Airfast RF Power LDMOS Transistor 1805-1995 MHz, 50 W Avg. 28 V, CFM4, RoHS |
DataSheet
|
175.3 | ||
AFV09P350-04GNR3 | NXP Semiconductors | - | OM-780G-4L | RF Power Transistor,720 to 960 MHz, 200 W, Typ Gain in dB is 19.5 @ 920 MHz, 48 V, LDMOS, SOT1825 |
DataSheet
|
287.46 | ||
A2G22S160-01SR3 | NXP Semiconductors | - | NI-400S-2S | RF Power Transistor,1800 to 2200 MHz, 125 W, Typ Gain in dB is 19.6 @ 2110 MHz, 48 V, GaN, SOT1828 |
DataSheet
|
166.09 | ||
BFR843EL3E6327XTSA1 | Infineon | - | 3-XFDFN | : Dualband WLAN, multiband mobile phone, UWB up to 10 GHz; ISM bands up to 10 GHz; Dedicated short range communication (DSRC) systems: WLAN IEEE802.11p |
DataSheet
|
0.3 | ||
VP0550N3-G-P013 | Microchip Technology | - | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET |
DataSheet
|
1.3017 | ||
VN0550N3-G-P013 | Microchip | - | TO-92-3 | MOSFET, N-CHANNEL ENHANCEMENT-MODE, 500V, 60 OHM 3 TO-92 AMMO ROHS COMPLIANT: YES |
DataSheet
|
1.1305 | ||
VRF157FLMP | Microchip | - | - | RF MOSFET (VDMOS) 170 V 600 W 30 MHz T2 T2 Box RoHS Compliant: Yes |
DataSheet
|
830.87 | ||
VND7N04-E | STMicroelectronics | - | TO-252-3, DPak (2 Leads + Tab), SC-63 | Current Limit SW 1-IN 1-OUT to 18V 11A Automotive 3-Pin(2+Tab) DPAK Tube |
DataSheet
|
0.9887 | ||
TN0620N3-G-P014 | Microchip | - | TO-92-3 | Mosfet, N-channel Enhancement-mode, 200V, 6.0 Ohm 3 TO-92 Ammo Rohs Compliant: Yes |
DataSheet
|
1.0214 | ||
3N164-E3 | Vishay | - | Available stock | RF Bipolar Transistors MOSFET 30V 3mA 375mW |
DataSheet
|
market price | ||
PTFA092213ELV4R250XTMA2 | Infineon | - | - | LDMOS FET, High Power RF, 220W, 920-960MHz, H-33288-2 Pkg, T/R 250 |
DataSheet
|
market price | ||
IPG20N06S4L26AATMA1 | Infineon | - | 8-PowerVDFN | thermal transfer (varies by die size); Two N-Channel MOSFETs in one package with 2 isolated leadframes | Target Applications: Direct Fuel Injection; ABS Valves; Solenoid control; Load Switches; LED and Body lighting |
DataSheet
|
0.56 | ||
IPB180N10S402ATMA1 | Infineon | - | TO-263-7, D²Pak (6 Leads + Tab) | Trans MOSFET N-CH 100V 180A Automotive 7-Pin(6+Tab) D2PAK T/R |
DataSheet
|
4.435 | ||
GTVA220701FAV1R2XTMA1 | Infineon Technologies | - | <em class="rohs">Lead free / RoHS Compliant</em> | RF MOSFET Transistors |
DataSheet
|
market price | ||
JTDB75 | Microchip | - | 55AW | Trans GP BJT NPN 55V 8A 3-Pin Case 55AW |
DataSheet
|
433.245 |