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SUD19N20-90-T4-E3 Vishay - TO-252-3, DPak (2 Leads + Tab), SC-63 Trans MOSFET N-CH 200V 19A 3-Pin(2+Tab) DPAK T/R
DataSheet
1.965
SI4413ADY-T1-GE3 Vishay - 8-SO Source Voltage Vds:-30V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V
DataSheet
1.541
SI4430BDY-T1-GE3 Vishay - 8-SOIC (0.154", 3.90mm Width) Source Voltage Vds:30V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:3V
DataSheet
1.1336
SI4463BDY-T1-GE3 Vishay - 8-SOIC (0.154", 3.90mm Width) Trans MOSFET P-CH 20V 9.8A 8-Pin SOIC N T/R
DataSheet
1.0719
SI4922BDY-T1-GE3 Vishay - 8-SO DUAL N CHANNEL MOSFET, 30V, 8A; Transist; DUAL N CHANNEL MOSFET, 30V, 8A; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:8A
DataSheet
1.0945
SI7806ADN-T1-GE3 Vishay - PowerPAK® 1212-8 Single N-Channel 30 V 0.016 Ohm 20 nC 1.5W Silicon SMT Mosfet - POWERPAK-1212-8
DataSheet
0.7599
SI7840BDP-T1-GE3 Vishay - PowerPAK® SO-8 MOSFET N-CH 30V 11A PPAK SO-8
DataSheet
1.387
RD70HVF1-101 Renesas - Available stock RD70HVF1 is a MOSFET type transistor specifically designed for VHF/UHF High power amplifiers applications.
DataSheet
market price
A2T18S160W31GSR3 NXP Semiconductors - NI-780GS-2L2LA RF Power Transistor,1805 to 1995 MHz, 129 W, Typ Gain in dB is 19.9 @ 1880 MHz, 28 V, LDMOS, SOT1805
DataSheet
154.855
A2T18S162W31GSR3 NXP Semiconductors - NI-780GS-2L2LA Airfast RF Power LDMOS Transistor 1805-1880 MHz, 32 W Avg., 28 V
DataSheet
147.625
AFT18S260W31GSR3 NXP Semiconductors - NI-780GS-2L2LA Airfast RF Power LDMOS Transistor 1805-1995 MHz, 50 W Avg. 28 V, CFM4, RoHS
DataSheet
175.3
AFV09P350-04GNR3 NXP Semiconductors - OM-780G-4L RF Power Transistor,720 to 960 MHz, 200 W, Typ Gain in dB is 19.5 @ 920 MHz, 48 V, LDMOS, SOT1825
DataSheet
287.46
A2G22S160-01SR3 NXP Semiconductors - NI-400S-2S RF Power Transistor,1800 to 2200 MHz, 125 W, Typ Gain in dB is 19.6 @ 2110 MHz, 48 V, GaN, SOT1828
DataSheet
166.09
BFR843EL3E6327XTSA1 Infineon - 3-XFDFN : Dualband WLAN, multiband mobile phone, UWB up to 10 GHz; ISM bands up to 10 GHz; Dedicated short range communication (DSRC) systems: WLAN IEEE802.11p
DataSheet
0.3
VP0550N3-G-P013 Microchip Technology - TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
DataSheet
1.3017
VN0550N3-G-P013 Microchip - TO-92-3 MOSFET, N-CHANNEL ENHANCEMENT-MODE, 500V, 60 OHM 3 TO-92 AMMO ROHS COMPLIANT: YES
DataSheet
1.1305
VRF157FLMP Microchip - - RF MOSFET (VDMOS) 170 V 600 W 30 MHz T2 T2 Box RoHS Compliant: Yes
DataSheet
830.87
VND7N04-E STMicroelectronics - TO-252-3, DPak (2 Leads + Tab), SC-63 Current Limit SW 1-IN 1-OUT to 18V 11A Automotive 3-Pin(2+Tab) DPAK Tube
DataSheet
0.9887
TN0620N3-G-P014 Microchip - TO-92-3 Mosfet, N-channel Enhancement-mode, 200V, 6.0 Ohm 3 TO-92 Ammo Rohs Compliant: Yes
DataSheet
1.0214
3N164-E3 Vishay - Available stock RF Bipolar Transistors MOSFET 30V 3mA 375mW
DataSheet
market price
PTFA092213ELV4R250XTMA2 Infineon - - LDMOS FET, High Power RF, 220W, 920-960MHz, H-33288-2 Pkg, T/R 250
DataSheet
market price
IPG20N06S4L26AATMA1 Infineon - 8-PowerVDFN thermal transfer (varies by die size); Two N-Channel MOSFETs in one package with 2 isolated leadframes | Target Applications: Direct Fuel Injection; ABS Valves; Solenoid control; Load Switches; LED and Body lighting
DataSheet
0.56
IPB180N10S402ATMA1 Infineon - TO-263-7, D²Pak (6 Leads + Tab) Trans MOSFET N-CH 100V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
DataSheet
4.435
GTVA220701FAV1R2XTMA1 Infineon Technologies - <em class="rohs">Lead free / RoHS Compliant</em> RF MOSFET Transistors
DataSheet
market price
JTDB75 Microchip - 55AW Trans GP BJT NPN 55V 8A 3-Pin Case 55AW
DataSheet
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Someone has searched this part IC Chips and others have searched some relevant parts as the following:
Vishay
TO-252-3, DPak (2 Leads + Tab), SC-63
NO
Trans MOSFET N-CH 200V 19A 3-Pin(2+Tab) DPAK T/R
Vishay
8-SO
NO
Source Voltage Vds:-30V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V
Vishay
8-SOIC (0.154", 3.90mm Width)
NO
Source Voltage Vds:30V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:3V
Vishay
8-SOIC (0.154", 3.90mm Width)
NO
Trans MOSFET P-CH 20V 9.8A 8-Pin SOIC N T/R
Vishay
8-SO
NO
DUAL N CHANNEL MOSFET, 30V, 8A; Transist; DUAL N CHANNEL MOSFET, 30V, 8A; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:8A
Vishay
PowerPAK® 1212-8
NO
Single N-Channel 30 V 0.016 Ohm 20 nC 1.5W Silicon SMT Mosfet - POWERPAK-1212-8
Vishay
PowerPAK® SO-8
NO
MOSFET N-CH 30V 11A PPAK SO-8
Renesas
Available stock
NO
RD70HVF1 is a MOSFET type transistor specifically designed for VHF/UHF High power amplifiers applications.
NXP Semiconductors
NI-780GS-2L2LA
NO
RF Power Transistor,1805 to 1995 MHz, 129 W, Typ Gain in dB is 19.9 @ 1880 MHz, 28 V, LDMOS, SOT1805
NXP Semiconductors
NI-780GS-2L2LA
NO
Airfast RF Power LDMOS Transistor 1805-1880 MHz, 32 W Avg., 28 V
NXP Semiconductors
NI-780GS-2L2LA
NO
Airfast RF Power LDMOS Transistor 1805-1995 MHz, 50 W Avg. 28 V, CFM4, RoHS
NXP Semiconductors
OM-780G-4L
NO
RF Power Transistor,720 to 960 MHz, 200 W, Typ Gain in dB is 19.5 @ 920 MHz, 48 V, LDMOS, SOT1825
NXP Semiconductors
NI-400S-2S
NO
RF Power Transistor,1800 to 2200 MHz, 125 W, Typ Gain in dB is 19.6 @ 2110 MHz, 48 V, GaN, SOT1828
Infineon
3-XFDFN
NO
: Dualband WLAN, multiband mobile phone, UWB up to 10 GHz; ISM bands up to 10 GHz; Dedicated short range communication (DSRC) systems: WLAN IEEE802.11p
Microchip Technology
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
NO
RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
Microchip
TO-92-3
NO
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 500V, 60 OHM 3 TO-92 AMMO ROHS COMPLIANT: YES
Microchip
-
NO
RF MOSFET (VDMOS) 170 V 600 W 30 MHz T2 T2 Box RoHS Compliant: Yes
STMicroelectronics
TO-252-3, DPak (2 Leads + Tab), SC-63
NO
Current Limit SW 1-IN 1-OUT to 18V 11A Automotive 3-Pin(2+Tab) DPAK Tube
Microchip
TO-92-3
NO
Mosfet, N-channel Enhancement-mode, 200V, 6.0 Ohm 3 TO-92 Ammo Rohs Compliant: Yes
Vishay
Available stock
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RF Bipolar Transistors MOSFET 30V 3mA 375mW
Infineon
-
NO
LDMOS FET, High Power RF, 220W, 920-960MHz, H-33288-2 Pkg, T/R 250
Infineon
8-PowerVDFN
NO
thermal transfer (varies by die size); Two N-Channel MOSFETs in one package with 2 isolated leadframes | Target Applications: Direct Fuel Injection; ABS Valves; Solenoid control; Load Switches; LED and Body lighting
Infineon
TO-263-7, D²Pak (6 Leads + Tab)
NO
Trans MOSFET N-CH 100V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
Infineon Technologies
<em class="rohs">Lead free / RoHS Compliant</em>
NO
RF MOSFET Transistors
Microchip
55AW
NO
Trans GP BJT NPN 55V 8A 3-Pin Case 55AW

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